DMBT2369 discrete semiconductors r dc components co., ltd. technical specifications of npn epitaxial planar transistor description designed for high speed switching applications. pinning 1 = base 2 = emitter 3 = collector .091(2.30).067(1.70) sot-23 dimensions in inches and (millimeters) .063(1.60).055(1.40) .108(0.65).089(0.25) .045(1.15).034(0.85) .118(3.00) .110(2.80) .020(0.50).012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30).035(0.90) .026(0.65).010(0.25) max .027(0.67).013(0.32) 2 1 3 characteristic symbol rating unit collector-base voltage vcbo 40 v collector-emitter voltage vces 40 v emitter-base voltage vebo 4.5 v collector current ic 500 ma total power dissipation pd 225 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo 40 - - v ic=10ma, ie=0 collector-emitter breakdown voltage bvces 40 - - v ic=10ma, ib=0 collector-emitter breakdown voltage bvceo 15 - - v ic=10ma, ib=0 emitter-base breakdown volatge bvebo 4.5 - - v ie=10ma, ic=0 collector cutoff current icbo - - 400 na vcb =20v, ie=0 collector-emitter saturation voltage (1) vce(sat) - - 250 mv ic=10ma, ib=1ma base-emitter saturation voltage (1) vbe(sat) 700 - 850 mv ic=10ma, ib=1ma dc current gain(1) hfe1 40 - 120 - ic=10ma, vce=1v hfe2 20 - - - ic=100ma, vce=2v output capacitance cob - - 4 pf vcb =5v, f=1mhz, ie=0 electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
|
